P-Channel MOSFET

P-Channel metal-oxide-semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model

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Libraries:
Simscape / Electrical / Semiconductors & Converters

Description

The P-Channel MOSFET block provides two main modeling modeling options:

• Based on threshold voltage — Uses the Shichman-Hodges equation to represent the device. This modeling approach, based on threshold voltage, has the benefits of simple parameterization and simple current-voltage expressions. However, these models have difficulty in accurately capturing transitions across the threshold voltage and lack some important effects, such as velocity saturation. For details, see Threshold-Based Model.

  This modeling option provides four ways of parameterizing an P-Channel MOSFET:

  • By specifying parameters from a datasheet.

  • By specifying equation parameters directly.

  • By a 2-D lookup table approximation to the I-V (current-voltage) curve. For details, see Representation by 2-D Lookup Table.

  • By a 3-D lookup table approximation to the I-V (current-voltage) curve that includes temperature data. For details, see Representation by 3-D Lookup Table.

• Based on surface potential — Uses the surface-potential equation to represent the device. This modeling approach provides a greater level of model fidelity than the simple square-law (threshold-voltage-based) models can provide. The trade-off is that there are more parameters that require extraction. For details, see Surface-Potential-Based Model.

Together with the thermal port variants (see Thermal Port), the block therefore provides you with four choices. To select the desired modeling option, set the Modeling option parameter to either:

• Threshold-based — Basic model, which represents the device using the Shichman-Hodges equation (based on threshold voltage) and does not simulate thermal effects. This is the default.

• Threshold-based with thermal — Model based on threshold voltage and with exposed thermal port.

• Surface-potential-based — Model based on surface potential. This model does not simulate thermal effects.

• Surface-potential-based with thermal — Thermal modeling option of the model based on surface potential.

Threshold-Based Model

The threshold-based modeling option of the block uses the Shichman and Hodges equations [1] for an insulated-gate field-effect transistor to represent a P-Channel MOSFET.

The drain-source current, I_DS, depends on the region of operation:

• In the off region (–V_GS < –V_th) the drain-source current is:

  $$I_{DS}=0$$

• In the linear region (0 < –V_DS < –V_GS +V_th) the drain-source current is:

  $$I_{DS}=-K\left((V_{GS}-V_{th})V_{DS}-V_{DS}{}^2/2\right)\left(1+\lambda \left|V_{DS}\right|\right)$$

• In the saturated region (0 < –V_GS +V_th < –V_DS) the drain-source current is:

  $$I_{DS}=-(K/2){(V_{GS}-V_{th})}^2\left(1+\lambda \left|V_{DS}\right|\right)$$

In the preceding equations:

• K is the transistor gain.

• V_DS is the negative drain-source voltage.

• V_GS is the gate-source voltage.

• V_th is the threshold voltage. For the four terminal parameterization, V_th is obtained using these equations:

  VBS Range	Vth Equation
  $$V_{BS}\le 0$$	$$V_{th}=V_{T0}+\gamma \left(\sqrt{2{\varphi }_B}\right)-\gamma \left(\sqrt{2{\varphi }_B+V_{BS}}\right)$$
  $$0<V_{BS}\le 4{\varphi }_B$$	$$V_{th}=V_{T0}-\frac{\gamma V_{BS}}{\sqrt{2{\varphi }_B}}$$
  $$V_{BS}>4{\varphi }_B$$	$$V_{th}=V_{T0}+\gamma \left(\sqrt{2{\varphi }_B}\right)$$

• λ is the channel modulation.

To specify the parallel conductance of the channel, connect an Environment Parameters block to the electrical network. Then, set the minimum conductance of the P-Channel MOSFET block and other SPICE-compatible blocks by setting the GMIN parameter of the Environment Parameters block.

Charge Model for Threshold-Based Modeling Option

The block models capacitances either by fixed capacitance values, or by tabulated values as a function of the drain-source voltage. In either case, you can either directly specify the gate-source and gate-drain capacitance values, or let the block derive them from the input and reverse transfer capacitance values. Therefore, the Parameterization options for charge model on the Capacitance setting are:

• Specify fixed input, reverse transfer and output capacitance — Provide fixed parameter values from datasheet and let the block convert the input and reverse transfer capacitance values to capacitance values, as described below. This is the default method.

• Specify fixed gate-source, gate-drain and drain-source capacitance — Provide fixed values for capacitance parameters directly.

• Specify tabulated input, reverse transfer and output capacitance — Provide tabulated capacitance and drain-source voltage values based on datasheet plots. The block converts the input and reverse transfer capacitance values to capacitance values, as described below.

• Specify tabulated gate-source, gate-drain and drain-source capacitance — Provide tabulated values for capacitances and drain-source voltage.

Use one of the tabulated capacitance options (Specify tabulated input, reverse transfer and output capacitance or Specify tabulated gate-source, gate-drain and drain-source capacitance) when the datasheet provides a plot of capacitances as a function of drain-source voltage. Using tabulated capacitance values gives more accurate dynamic characteristics and avoids the need for iterative tuning of parameters to fit the dynamics.

If you use the Specify fixed gate-source, gate-drain and drain-source capacitance or Specify tabulated gate-source, gate-drain and drain-source capacitance option, the Capacitance setting lets you specify the Gate-drain capacitance, Cgd, Gate-source capacitance, Cgs, and Drain-source capacitance, Cds parameter values (fixed or tabulated) directly. Otherwise, the block derives them from the Input capacitance, Ciss, Reverse transfer capacitance, Crss, and Output capacitance, Coss parameter values. These two parameterization methods are related as follows:

• C_GD = Crss

• C_GS = Ciss – Crss

• C_DS = Coss – Crss

For the four terminals parameterization, the Input capacitance, Ciss, Reverse transfer capacitance, Crss, and Output capacitance, Coss are obtained using these equations:

• C_GD = Crss

• C_GS + C_GB = Ciss – Crss

• C_DB = Coss – Crss

A simplified Meyer's capacitance model is used to describe the gate-source capacitance, C_GS, the gate-bulk capacitance, C_GB, and the gate-drain capacitance, C_GD. These figures show how the gate-bulk and gate-source capacitances change instantaneously, while the

Gate-bulk and gate-source capacitance change instantaneously.

The two fixed capacitance options (Specify fixed input, reverse transfer and output capacitance or Specify fixed gate-source, gate-drain and drain-source capacitance) let you model gate capacitance as a fixed gate-source capacitance C_GS and either a fixed or a nonlinear gate-drain capacitance C_GD. If you select the Gate-drain charge function is nonlinear option for the Gate-drain charge-voltage linearity parameter, then the gate-drain charge relationship is defined by the piecewise-linear function shown in the following figure.

For instructions on how to map a time response to device capacitance values, see the N-Channel IGBT block reference page. However, this mapping is only approximate because the Miller voltage typically varies more from the threshold voltage than in the case for the IGBT.

Note

Because this block implementation includes a charge model, you must model the impedance of the circuit driving the gate to obtain representative turn-on and turn-off dynamics. Therefore, if you are simplifying the gate drive circuit by representing it as a controlled voltage source, you must include a suitable series resistor between the voltage source and the gate.

Representation by 2-D Lookup Table

For the lookup table representation of the detailed block modeling option, you provide tabulated values for source-drain currents as a function of source-gate voltage and source-gate voltage. The main advantage of using this option is simulation speed. It also lets you parameterize the device from either measured data or from data obtained from another simulation environment.

This figure shows the implementation of the 2-D lookup table option when you set Isd-Vsd parameterization to Provide negative and positive Vsd data:

This figure shows the implementation of the 2-D lookup table option when you set Isd-Vsd parameterization to Provide positive Vsd data only:

For the four terminal MOSFET, the surface potential and body factor values are calculated based on the nearest threshold voltage as shown in this picture:

Note

To ensure that the signs of the source-drain current and source-drain voltage are consistent:

• If the source-drain voltage is equal to 0, the value of the Tabulated source-drain currents, Isd(Vsg,Vsd) parameter must be equal to 0.

• The tabulated power, which is the product of the Tabulated source-drain currents, Isd(Vsg,Vsd) parameter and the source-drain voltage, must be greater than or equal to 0.

• The tabulated conductance, which is the gradient of the Tabulated source-drain currents, Isd(Vsg,Vsd) parameter with respect to the source-drain voltage V_sd, must be greater than or equal to 0.

• The first gradient of the Tabulated source-drain currents, Isd(Vsg,Vsd) parameter, with respect to souce-gate voltage V_sg, must be equal to 0.

Representation by 3-D Lookup Table

For the temperature-dependent lookup table representation of the detailed block modeling option, you provide tabulated values for source-drain currents as a function of source-gate voltage, source-gate voltage, and temperature.

Note

To ensure that the signs of the source-drain current and source-drain voltage are consistent:

• If the source-drain voltage is equal to 0, the value of the Tabulated source-drain currents, Isd(Vsg,Vsd,T) parameter must be equal to 0.

• The tabulated power, which is the product of the Tabulated source-drain currents, Isd(Vsg,Vsd,T) parameter and the source-drain voltage, must be greater than or equal to 0.

• The tabulated conductance, which is the gradient of the Tabulated source-drain currents, Isd(Vsg,Vsd,T) parameter with respect to the source-drain voltage V_sd, must be greater than or equal to 0.

• The first gradient of the Tabulated source-drain currents, Isd(Vsg,Vsd,T) parameter, with respect to souce-gate voltage V_sg, must be equal to 0.

Surface-Potential-Based Model

The surface-potential-based modeling option of the block provides a greater level of model fidelity than the simple square-law (threshold-voltage-based) model. The surface-potential-based block modeling option includes the following effects:

• Fully nonlinear capacitance model (including the nonlinear Miller capacitance)

• Charge conservation inside the model, so you can use the model for charge sensitive simulations

• Velocity saturation and channel-length modulation

• The intrinsic body diode

• Reverse recovery in the body diode model

• Temperature scaling of physical parameters

• For the thermal modeling option, dynamic self-heating (that is, you can simulate the effect of self-heating on the electrical characteristics of the device)

This model is a minimal version of the world-standard PSP model (see https://briefs.techconnect.org/papers/introduction-to-psp-mosfet-model/), including only certain effects from the PSP model to strike a balance between model fidelity and complexity. For details of the physical background to the phenomena included in this model, see [2].

The surface-potential equation is derived similar to the way described on the N-Channel MOSFET block reference page, with all voltages, charges, and currents multiplied by -1.

The overall model consists of an intrinsic MOSFET defined by the surface-potential formulation, a body diode, series resistances, and fixed overlap capacitances, as shown in the schematic.

Modeling Body Diode

The block models the body diode either as an ideal, exponential diode or as a tabulated diode.

Exponential Diode

The block models the body diode either as an ideal, exponential diode or as a tabulated diode.

When you set Model body diode to Exponential, the junction and diffusion capacitances are:

$$I_{dio}=I_s\left[\exp \left(-\frac{V_{BD}}{n{\varphi }_T}\right)-1\right]$$

$$C_j=\frac{C_{j0}}{\sqrt{1+\frac{V_{BD}}{V_{bi}}}}$$

$$C_{diff}=\frac{\tau I_s}{n{\varphi }_T}\exp \left(-\frac{V_{BD}}{n{\varphi }_T}\right)$$

where:

• I_dio is the current through the diode.

• I_s is the reverse saturation current.

• V_BD is the body-drain voltage.

• n is the ideality factor.

• ϕ_T is the thermal voltage.

• C_j is the junction capacitance of the diode.

• C_j0 is the zero-bias junction capacitance.

• V_bi is the built-in voltage.

• C_diff is the diffusion capacitance of the diode.

• τ is the transit time.

The capacitances are defined through an explicit calculation of charges, which are then differentiated to give the capacitive expressions above. The block computes the capacitive diode currents as time derivatives of the relevant charges, similar to the computation in the surface-potential-based MOSFET model.

Tabulated Diode

To model a tabulated diode, set the Model body diode parameter to Tabulated I-V curve. This figure shows the implementation of the tabulated diode option:

When choosing this parameterization, you must provide the data for the forward bias only.

The block implements the diode using a smooth interpolation option. If the diode exceeds the provided tabulated data range, the block uses a linear extrapolation technique at the last voltage-current data point.

To specify the off conductance of the tabulated diode, set the Diode off conductance parameter. (since R2024a)

Note

The tabulated diode does not model the reverse breakdown.

Modeling Temperature Dependence

The default behavior is that dependence on temperature is not modeled, and the device is simulated at the temperature for which you provide block parameters. To model the dependence on temperature during simulation, select Model temperature dependence for the Parameterization parameter in the Temperature Dependence setting.

Threshold-Based Model

For threshold-based modeling option, you can include modeling the dependence of the transistor static behavior on temperature during simulation. Temperature dependence of the junction capacitances is not modeled, this being a much smaller effect.

When including temperature dependence, the transistor defining equations remain the same. The gain, K, and the threshold voltage, V_th, become a function of temperature according to the following equations:

$$K_{Ts}=K_{Tm1}{\left(\frac{T_s}{T_{m1}}\right)}^{BEX}$$

V_ths = V_th1 + α ( T_s – T_m1)

where:

• T_m1 is the temperature at which the transistor parameters are specified, as defined by the Measurement temperature parameter value.

• T_s is the simulation temperature.

• K_Tm1 is the transistor gain at the measurement temperature.

• K_Ts is the transistor gain at the simulation temperature. This is the transistor gain value used in the MOSFET equations when temperature dependence is modeled.

• V_th1 is the threshold voltage at the measurement temperature.

• V_ths is the threshold voltage at the simulation temperature. This is the threshold voltage value used in the MOSFET equations when temperature dependence is modeled.

• BEX is the mobility temperature exponent. A typical value of BEX is -1.5.

• α is the gate threshold voltage temperature coefficient, dV_th/dT.

For the four terminals parameterization, V_th is obtained using these equations:

VBS Range	Vth Equation
$$V_{BS}\le 0$$	$$\frac{d{V}_{th}}{dT}=\frac{d{V}_{T0}}{dT}-\frac{\gamma }{2\sqrt{2{\varphi }_B}}\frac{d2{\varphi }_B}{dT}+\frac{\gamma }{2\sqrt{2{\varphi }_B-V_{BS}}}\frac{d2{\varphi }_B}{dT}$$
$$0<V_{BS}\le 4{\varphi }_B$$	$$\frac{d{V}_{th}}{dT}=\frac{d{V}_{T0}}{dT}-\frac{\gamma V_{BS}}{4}{\left(2{\varphi }_B\right)}^{-\frac{3}{2}}\frac{d2{\varphi }_B}{dT}$$
$$V_{BS}>4{\varphi }_B$$	$$\frac{d{V}_{th}}{dT}=\frac{d{V}_{T0}}{dT}-\frac{\gamma }{2\sqrt{2{\varphi }_B}}\frac{d2{\varphi }_B}{dT}$$

Where:

• $${\varphi }_B=\frac{kT}{q}\ln \left(\frac{N_B}{n_i}\right)$$ is the surface potential and $$\frac{d2{\varphi }_B}{dT}=-\frac{1}{T}\left[2{\varphi }_B-\left(\frac{E_g(0)}{q}+\frac{3kT}{q}\right)\right]$$.

• E_g(0) is the extrapolated zero degree band-gap, which is equal to 1.16 eV for silicon.

• V_BS is the bulk-source voltage.

For most MOSFETS, you can use the default value of -1.5 for BEX. Some datasheets quote the value for α, but most typically they provide the temperature dependence for drain-source on resistance, R_DS(on). Depending on the block parameterization method, you have two ways of specifying α:

• If you parameterize the block from a datasheet, you have to provide R_DS(on) at a second measurement temperature. The block then calculates the value for α based on this data.

• If you parameterize by specifying equation parameters, you have to provide the value for α directly.

If you have more data comprising drain current as a function of gate-source voltage for more than one temperature, then you can also use Simulink^® Design Optimization™ software to help tune the values for α and BEX.

Surface-Potential-Based Model

The surface-potential-based model includes temperature effects on the capacitance characteristics, as well as modeling the dependence of the transistor static behavior on temperature during simulation.

The Measurement temperature parameter on the Main setting specifies temperature T_m1 at which the other device parameters have been extracted. The Temperature Dependence setting provides the simulation temperature, T_s, and the temperature-scaling coefficients for the other device parameters. For more information, see Temperature Dependence (Surface-Potential-Based Modeling Option).

Faults

To model a fault in the P-Channel MOSFET block, in the Faults section, click the Add fault hyperlink next to the fault that you want to model. In the Add Fault window, specify the fault properties. For more information about fault modeling, see Fault Behavior Modeling and Fault Triggering.

The P-Channel MOSFET block models five types of fault:

• Open circuit — Failure due to metallization burnout

• Drain-source short — Failure due to avalanche breakdown on drain-source channel

• Drain-bulk short or source-bulk short — Failure due to avalanche breakdown on drain-bulk or source-bulk channels

• Gate oxide short — Failure of the gate oxide dielectric layer

• Parameter shift — Failure due to aging

The block can trigger fault events at a specific time or when the current or voltage exceed the limit for longer than a specific time interval.

Parameter Shift Fault

If, in the Faults settings, you set the Failure mode parameter to Parameter shift, the MOSFET fails due to the aging of its components. This equation defines the value of the shifted parameters:

$$Parameter(t)=Paramete{r}_{faulted}-\left(Paramete{r}_{faulted}-Paramete{r}_{unfaulted}\right)\text{sech}\left(\frac{t-t_{th}}{\tau }\right),$$

where t_th is the time threshold when the fault is triggered and τ is the value of the Fault transition time constant, tau parameter.

Gate Oxide Short Fault

If, in the Faults settings, you set the Failure mode parameter to Gate oxide short, the gate oxide dielectric layer fails. These figures show the equivalent circuits for the three-terminal MOSFET in the unfaulted and faulted state:

These figures show the equivalent circuits for the four-terminal MOSFET in the unfaulted and faulted state:

Thermal Port

The block has an optional thermal port, hidden by default. To expose the thermal port, set the Modeling option parameter to:

• Threshold-based with thermal — Model based on threshold voltage and with exposed thermal port

• Surface-potential-based with thermal — Model based on surface potential and with exposed thermal port

This action displays the thermal port H on the block icon, and exposes the Thermal Port parameters.

Use the thermal port to simulate the effects of generated heat and device temperature. For more information on using thermal ports and on the Thermal Port parameters, see Simulating Thermal Effects in Semiconductors.

Variables

To set the priority and initial target values for the block variables before simulation, use the Initial Targets section in the block dialog box or Property Inspector. For more information, see Set Priority and Initial Target for Block Variables.

Use nominal values to specify the expected magnitude of a variable in a model. Using system scaling based on nominal values increases the simulation robustness. Nominal values can come from different sources. One of these sources is the Nominal Values section in the block dialog box or Property Inspector. For more information, see System Scaling by Nominal Values.

This table shows the relationship between the capacitances of the block and the initial targets:

Defined Capacitance	Initial Targets
Gate-emitter capacitance, Cge	Set the initial target for the gate-emitter capacitance voltage only. Set the initial target of the collector-emitter capacitance voltage to 0 or set its priority to None.
Collector-emitter capacitance, Cce	Set the initial target for the collector-emitter capacitance voltage only. Set the initial target of the gate-emitter capacitance voltage to 0 or set its priority to None.
Gate-collector capacitance, Cgc	Set the initial targets for the gate-collector voltages by applying constraints on the gate-emitter and collector-emitter voltages. The initial condition of the gate-collector capacitance voltage is equal to the voltage between the gate-emitter and collector-emitter.
Gate-emitter capacitance, Cge, and gate-collector capacitance, Cgc	Set the initial targets for the gate-emitter and gate-collector voltages by applying constraints on the gate-emitter and collector-emitter voltages. The initial condition of the gate-collector capacitance voltage is equal to the voltage between the gate-emitter and the collector-emitter.
Gate-emitter capacitance, Cge, and collector-emitter capacitance, Cce	Set the initial target for the gate-emitter and the collector-emitter capacitance.
Gate-collector capacitance, Cgc, and collector-emitter capacitance, Cce	Set the initial targets for the gate-collector and collector-emitter voltages by applying constraints on the gate-emitter and collector-emitter voltages. The initial condition of the gate-collector capacitance voltage is equal to the voltage between the gate-emitter and the collector-emitter.
Gate-emitter capacitance, Cge, gate-collector capacitance, Cgc, and collector-emitter capacitance, Cce	Set the initial targets for the gate-emitter, gate collector and collector-emitter capacitances by applying constraints on the gate-emitter and collector-emitter voltages. The initial condition of the gate-collector capacitance voltage is equal to the voltage between the gate-emitter and the collector-emitter.

Note

Inside your model, the number of initial targets with Priority equal to Low or High must match the number of differential variables. The differential variables come from the inductors and the capacitances in the model.

Plot Device Characteristics

You can plot the basic I-V characteristics of the P-Channel MOSFET block without building a complete model. Use the plots to explore the impact of your parameter choices on device characteristics. If you parameterize the block from a datasheet, you can compare your plots to the datasheet to check that you parameterized the block correctly. If you have a complete working model but do not know which manufactured part to use, you can compare your plots to datasheets to help you decide.

To enable this option, set the Modeling option parameter of the P-Channel MOSFET block to Threshold Based or Surface potential based. To plot the basic characteristics, right-click the block and select Electrical > Basic characteristics from the context menu. For more information about the Basic characteristics option, see Plot Basic I-V Characteristics of Semiconductor Blocks.

The P-Channel MOSFET blocks also supports the Explore characteristics option. Use this option to perform an in-depth study of block characteristics and match the block behavior to a set of target characteristics. To enable this option, set the Modeling option parameter of the block to Surface potential based. Then, right-click the block and select Electrical > Explore characteristics from the context menu. For more information about this option, see MOSFET Characteristics Viewer.

Examples

Modeling an Integrated Circuit

Two ways to create a model of an integrated circuit that can be used in conjunction with other Simscape™ Electrical™ blocks. The first approach is to build a behavioral model using Simscape Foundation Library PS blocks and/or Simulink® blocks. The second is to build an implementation model from basic Simscape Electrical blocks. To look under the masks and view the details, select the relevant block and type ctrl-U.

• Open Model

Interactive Generation of MOSFET Characteristics

Explore the impact of parameter choices on the I-V and C-V characteristics for a surface-potential-based MOSFET model. To open the MOSFET Characteristics window, in the MATLAB® Command Window, type MOSFETParameterAnalyzer.

• Open Model

Assumptions and Limitations

When modeling temperature dependence for threshold-based block modeling option, consider the following:

• The block does not account for temperature-dependent effects on the capacitances.

• When you specify R_DS(on) at a second measurement temperature, it must be quoted for the same working point (that is, the same drain current and gate-source voltage) as for the other R_DS(on) value. Inconsistent values for R_DS(on) at the higher temperature will result in unphysical values for α and unrepresentative simulation results. Typically R_DS(on) increases by a factor of about 1.5 for a hundred degree increase in temperature.

• You may need to tune the values of BEX and threshold voltage, V_th, to replicate the I_DS–V_GS relationship (if available) for a given device. Increasing V_th moves the I_DS–V_GS plots to the right. The value of BEX affects whether the I_DS–V_GS curves for different temperatures cross each other, or not, for the ranges of V_DS and V_GS considered. Therefore, an inappropriate value can result in the different temperature curves appearing to be reordered. Quoting R_DS(on) values for higher currents, preferably close to the current at which it will operate in your circuit, will reduce sensitivity to the precise value of BEX.

Ports

Conserving

G — Gate terminal

electrical

Electrical conserving port associated with the transistor gate terminal.

D — Drain terminal

electrical

Electrical conserving port associated with the transistor drain terminal.

S — Source terminal

electrical

Electrical conserving port associated with the transistor source terminal.

B — Body terminal

electrical

Electrical conserving port associated with the transistor body terminal.

Dependencies

To enable this port, set Number of terminals to Four.

H — Thermal port

thermal

Thermal conserving port.

Dependencies

To enable this port, set Modeling option to Threshold-based with thermal or Surface-potential-based with thermal.

Parameters

Modeling Option — MOSFET representation

Threshold-based (default) | Threshold-based with thermal | Surface-potential-based | Surface-potential-based with thermal

Select the MOSFET representation:

• Threshold-based — Basic model, which represents the device using the Shichman-Hodges equation (based on threshold voltage) and does not simulate thermal effects. This is the default.

• Threshold-based with thermal — Model based on threshold voltage and with exposed thermal port.

• Surface-potential-based — Model based on surface potential. This model does not simulate thermal effects.

• Surface-potential-based with thermal — Thermal modeling option of the model based on surface potential.

Main (Threshold-Based Modeling Option)

This configuration of the Main setting corresponds to the threshold-based block modeling option, which is the default. If you are using the surface-potential-based modeling option of the block, see Main (Surface-Potential-Based Modeling Option).

Number of terminals — Terminal parameterization

Three (default) | Four

Number of terminals of the block.

Parameterization — Block parameterization

Specify from a datasheet (default) | Specify using equation parameters directly | Lookup table (2-D, temperature independent) | Lookup table (3-D, temperature dependent)

Select one of the following methods for block parameterization:

• Specify from a datasheet — Provide the drain-source on resistance and the corresponding drain current and gate-source voltage. The block calculates the transistor gain for the Shichman and Hodges equations from this information.

• Specify using equation parameters directly — Provide the transistor gain.

• Lookup table (2-D, temperature independent) — Use 2-D table lookup for drain-source current as a function of gate-source voltage and drain-source voltage.

• Lookup table (3-D, temperature dependent) — Use 3-D table lookup for drain-source current as a function of gate-source voltage, drain-source voltage, and temperature.

Drain-source on resistance, R_DS(on) — Drain-source on resistance

0.167 Ohm (default)

The ratio of the drain-source voltage to the drain current for specified values of drain current and gate-source voltage. R_DS(on) should have a positive value.

Dependencies

To enable this parameter, set Parameterization to Specify from a datasheet.

Drain current, Ids, for R_DS(on) — Drain current, Ids, for R_DS(on)

-2.5 A (default)

The drain current the block uses to calculate the value of the drain-source resistance. I_DS should have a negative value.

Dependencies

To enable this parameter, set Parameterization to Specify from a datasheet.

Gate-source voltage, Vgs, for R_DS(on) — Gate-source voltage, Vgs, for R_DS(on)

-4.5 V (default)

The gate-source voltage the block uses to calculate the value of the drain-source resistance. V_GS should have a negative value.

Dependencies

To enable this parameter, set Parameterization to Specify from a datasheet.

Gain, K — Gain, K

2 A/V2 (default)

Positive constant gain coefficient for the Shichman and Hodges equations.

Dependencies

To enable this parameter, set Parameterization to Specify using equation parameters directly.

Gate-source threshold voltage, Vth — Gate-source threshold voltage

-1.4 V (default)

Gate-source threshold voltage V_th in the Shichman and Hodges equations. For an enhancement device, V_th should be negative. For a depletion mode device, V_th should be positive.

Dependencies

To enable this parameter, set Number of terminals to Three and Parameterization to Specify from a datasheet or Specify using equation parameters directly.

Gate-source threshold voltage at zero bulk-source voltage, Vth0 — Gate-source threshold voltage at zero bulk-source voltage

-1.4 V (default)

Gate-source threshold voltage at zero bulk-source voltage V_th0 in the Shichman and Hodges equations.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Specify from a datasheet or Specify using equation parameters directly.

Channel modulation, L — Channel modulation

0 1/V (default)

The channel-length modulation, usually denoted by the mathematical symbol λ. When in the saturated region, it is minus the rate of change of drain current with drain-source voltage. The effect on drain current is typically small, and the effect is neglected if calculating transistor gain K from drain-source on-resistance, R_DS(on). A typical value is 0.02, but the effect can be ignored in most circuit simulations. However, in some circuits a small nonzero value may help numerical convergence.

Dependencies

To enable this parameter, set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

Gate-source threshold voltage at first non-zero bulk-source voltage, Vth1 — Gate-source threshold voltage at first non-zero bulk-source voltage

-1.6071 V (default)

Gate-source threshold voltage at first non-zero bulk-source voltage V_th1 in the Shichman and Hodges equations.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Specify from a datasheet.

First bulk-source voltage, Vbs1 — First bulk-source voltage

1 V (default)

First bulk-source voltage, V_bs1.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Specify from a datasheet.

Gate-source threshold voltage at second non-zero bulk-source voltage, Vth2 — Gate-source threshold voltage at second non-zero bulk-source voltage

-1.7660 V (default)

Gate-source threshold voltage at second non-zero bulk-source voltage V_th2 in the Shichman and Hodges equations.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Specify from a datasheet.

Second bulk-source voltage, Vbs2 — Second bulk-source voltage

2 V (default)

Second bulk-source voltage, V_bs2.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Specify from a datasheet.

Body factor — Body factor

0.5 V^0.50000 (default)

Body factor, γ.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Specify using equation parameters directly.

Surface potential — Surface potential

0.5 V (default)

Surface potential.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Specify using equation parameters directly.

Measurement temperature — Measurement temperature

25 degC (default)

Temperature T_m1 at which Drain-source on resistance, R_DS(on) is measured.

Dependencies

To enable this parameter, set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

Vector of source-gate voltages, Vsg — Vector of source-gate voltages

[-.5, 2, 3, 4, 5] V (default)

Vector of source-gate voltages.

Dependencies

To enable this parameter, set Parameterization to either Lookup table (2-D, temperature independent) or Lookup table (3-D, temperature dependent).

Vector of source-drain voltages, Vsd — Vector of source-drain voltages

[0, 2, 4, 8, 12, 16, 20] V (default)

Vector of source-drain voltages, to be used for table lookup. The vector values must be strictly increasing.

Dependencies

To enable this parameter, set Parameterization to either Lookup table (2-D, temperature independent) or Lookup table (3-D, temperature dependent).

Vector of source-bulk voltages, Vsb — Vector of dsource-bulk voltages

[0, -4, -6, -12] V (default)

Vector of source-bulk voltages, to be used for table lookup.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to either Lookup table (2-D, temperature independent) or Lookup table (3-D, temperature dependent).

Tabulated source-drain currents, Isd(Vsg,Vsd) — Tabulated source-drain currents temperature independent

[0, 0, 0, 0, 0, 0, 0; 0, .003, .0038, .0043, .0046, .0048, .0049; 0, .0055, .008, .009, .0095, .01, .0101; 0, .0115, .016, .018, .019, .0195, .02; 0, .0152, .0225, .0265, .028, .0295, .03] A (default)

Tabulated values for source-drain currents as a function of source-gate voltage and source-drain voltage, to be used for 2-D table lookup. Each value in the matrix specifies the source-drain current for a specific combination of source-gate voltage and source-drain voltage. The matrix size must match the dimensions defined by the source-gate voltage and source-drain voltage vectors.

Dependencies

To enable this parameter, set Number of terminals to Three and Parameterization to Lookup table (2-D, temperature independent).

Vector of temperatures, T — Vector of temperatures

[25 125] degC (default)

Vector of temperatures, to be used for table lookup. The vector values must be strictly increasing. The values can be nonuniformly spaced.

Dependencies

To enable this parameter, set Parameterization to Lookup table (3-D, temperature dependent).

Tabulated source-drain currents, Isd(Vsg,Vsd,T) — Tabulated source-drain currents temperature dependent

zeros(5, 7, 2) A (default)

Tabulated values for source-drain currents as a function of source-gate voltage, source-drain voltage, and temperature, to be used for 2-D table lookup. Each value in the matrix specifies the source-drain current for a specific combination of source-gate voltage, source-drain voltage, and temperature. The matrix size must match the dimensions defined by the source-gate voltage, source-drain voltage, and temperature vectors.

Dependencies

To enable this parameter, set Number of terminals to Three and Parameterization to Lookup table (3-D, temperature dependent).

Tabulated gate-source threshold voltage, Vth(Vsb) — Vector of gate-source threshold voltage temperature independent

[.4, 1.2, 1.4, 1.45] V (default)

Tabulated values for gate-source threshold voltage as a function of source-bulk voltage, to be used for 2-D table lookup The vector values must be strictly increasing.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Lookup table (2-D, temperature independent).

Tabulated source-drain currents at zero source-bulk voltage, Isd(Vsg,Vsd) — Tabulated source-drain currents at zero source-bulk voltage, temperature independent

[0, 0, 0, 0, 0, 0, 0; 0, .003, .0038, .0043, .0046, .0048, .0049; 0, .0055, .008, .009, .0095, .01, .0101; 0, .0115, .016, .018, .019, .0195, .02; 0, .0152, .0225, .0265, .028, .0295, .03] A (default)

Tabulated values for source-drain currents at zero source-bulk voltage, as a function of source-gate voltage and source-drain voltage, to be used for 2-D table lookup. Each value in the matrix specifies the source-drain current for a specific combination of source-gate voltage and source-drain voltage. The matrix size must match the dimensions defined by the source-gate voltage and source-drain voltage vectors.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Lookup table (2-D, temperature independent).

Tabulated gate-source threshold voltage, Vth(Vsb,T) — Vector of gate-source threshold voltage temperature dependent

[.4, .35; 1.2, 1.15; 1.4, 1.35; 1.45, 1.4] V (default)

Tabulated values for gate-source threshold voltage as a function of bulk-source voltage and temperature, to be used for 3-D table lookup The vector values must be strictly increasing.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Lookup table (3-D, temperature dependent).

Tabulated source-drain currents at zero source-bulk voltage, Isd(Vsg,Vsd,T) — Tabulated source-drain currents at zero source-bulk voltage, temperature dependent

zeros(5, 7, 2) A (default)

Tabulated values for source-drain currents at zero source-bulk voltage, as a function of source-gate voltage, source-drain voltage, and temperature, to be used for 3-D table lookup. Each value in the matrix specifies the source-drain current for a specific combination of source-gate voltage, source-drain voltage, and temperature. The matrix size must match the dimensions defined by the source-gate voltage, source-drain voltage, and temperature vectors.

Dependencies

To enable this parameter, set Number of terminals to Four and Parameterization to Lookup table (3-D, temperature dependent).

Isd-Vsd parameterization — Isd-Vsd table data as symmetric data

Provide negative and positive Vsd data (default) | Provide positive Vsd data only

Whether to provide Isd-Vsd table data as symmetric data. If you choose Provide negative and positive Vsd data, the data is not symmetric. If you choose Provide positive Vsd data only, the block rotates and flips the positive data to obtain the negative data.

Dependencies

To enable this parameter, set Parameterization to either Lookup table (2-D, temperature independent) or Lookup table (3-D, temperature dependent).

Main (Surface-Potential-Based Modeling Option)

This configuration of the Main setting corresponds to the surface-potential-based block modeling option. If you are using the threshold-based modeling option of the block, based on the Shichman and Hodges equations, see Main (Threshold-Based Modeling Option).

Number of terminals — Terminal parameterization

Three (default) | Four

Number of terminals of the block.

Gain — Gain

18 A/V2 (default)

The MOSFET gain, β. This parameter primarily defines the linear region of operation on an I_D–V_DS characteristic.

Flatband voltage — Flatband voltage

-1.1 V (default)

The flatband voltage, V_FB, defines the gate bias that must be applied in order to achieve the flatband condition at the surface of the silicon. You can also use this parameter to arbitrarily shift the threshold voltage due to material work function differences, and to trapped interface or oxide charges. In practice, however, it is usually recommended to modify the threshold voltage by using the Body factor and Surface potential at strong inversion parameters first, and only use this parameter for fine-tuning.

Body factor — Body factor

3.5 V1/2 (default)

Body factor, γ, in the surface-potential equation. This parameter primarily impacts the threshold voltage.

Surface potential at strong inversion — Surface potential at strong inversion

1 V (default)

The 2ϕ_B term in the surface-potential equation. This parameter also primarily impacts the threshold voltage.

Velocity saturation factor — Velocity saturation factor

0.4 1/V (default)

Velocity saturation, θ_sat, in the drain-current equation. Use this parameter in cases where a good fit to linear operation leads to a saturation current that is too high. By increasing this parameter value, you reduce the saturation current. For high-voltage devices, it is often the case that a good fit to linear operation leads to a saturation current that is too low. In such a case, either increase both the gain and the drain ohmic resistance or use a P-Channel LDMOS FET block instead.

Channel-length modulation factor — Channel-length modulation factor

0 (default)

The factor, α, multiplying the logarithmic term in the G_ΔL equation. This parameter describes the onset of channel-length modulation. For device characteristics that exhibit a positive conductance in saturation, increase the parameter value to fit this behavior. The default value is 0, which means that channel-length modulation is off by default.

Channel-length modulation voltage — Channel-length modulation voltage

5e-2 V (default)

The voltage V_p in the G_ΔL equation. This parameter controls the drain-voltage at which channel-length modulation starts to become active.

Surface roughness scattering factor — Surface roughness scattering factor

0 1/V (default)

Indicates the strength of the mobility reduction. The mobility is μ = μ/G_mob, where μ₀ is the low-field mobility without the effect of surface scattering. The mobility reduction factor, G_mob, is given by $$G_{mob}=\sqrt{1+{\left({\theta }_{sr}{V}_{eff}\right)}^2}$$₀, where θ_sr is the surface roughness scattering factor and V_eff is a voltage that is indicative of the effective vertical electric field strength in the channel, E_eff. For high vertical electric fields, the mobility is roughly proportional to E_eff for holes.

Linear-to-saturation transition coefficient — Linear-to-saturation transition coefficient

8 (default)

This parameter controls how smoothly the MOSFET transitions from linear into saturation, particularly when velocity saturation is enabled. This parameter can usually be left at its default value, but you can use it to fine-tune the knee of the I_D–V_DS characteristic. The expected range for this parameter value is between 2 and 8.

Measurement temperature — Measurement temperature

25 degC (default)

Temperature T_m1 at which the block parameters are measured. If the Device simulation temperature parameter on the Temperature Dependence setting differs from this value, then device parameters will be scaled from their defined values according to the simulation and reference temperatures. For more information, see Temperature Dependence (Surface-Potential-Based Modeling Option).

Ohmic Resistance

If you set Modeling option to Threshold-based or Threshold-based with thermal, to enable this setting set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

Source ohmic resistance — Source ohmic resistance

1e-4 Ohm (default) | nonnegative scalar

Transistor source resistance, that is, the series resistance associated with the source contact. The value must be greater than or equal to 0. The default value for threshold-based variants is 1e-4 Ohm. The default value for surface-potential-based variants is 2e-3 Ohm.

Drain ohmic resistance — Drain ohmic resistance

0.01 Ohm (default) | nonnegative scalar

Transistor drain resistance, that is, the series resistance associated with the drain contact. The value must be greater than or equal to 0. The default value for threshold-based variants is 0.01 Ohm. The default value for surface-potential-based variants is 0.17 Ohm.

Gate ohmic resistance — Gate ohmic resistance

8.4 Ohm (default) | nonnegative scalar

Transistor gate resistance, that is, the series resistance associated with the gate contact. The value must be greater than or equal to 0.

Dependencies

To enable this parameter, set Modeling option to Surface-potential-based or Surface-potential-based with thermal.

Body ohmic resistance — Transistor body resistance

0.001 Ohm (default) | nonnegative scalar

Transistor body resistance, that is, the series resistance associated with the body contact.

Dependencies

To enable this parameter, set:

• Number of terminals to Four.

• Modeling option to Threshold-based or Threshold-based with thermal.

Bulk ohmic resistance — Transistor bulk resistance

2e-3 Ohm (default) | nonnegative scalar

Transistor body resistance, that is, the series resistance associated with the bulk contact.

Dependencies

To enable this parameter, set:

• Number of terminals to Four.

• Modeling option to Surface-potential-based or Surface-potential-based with thermal.

Packaging

Source lead resistance — Source lead resistance of transistor

0 Ohm (default) | nonnegative scalar

Since R2024b

Source lead resistance of the transistor, that is, the series lead resistance associated with the source contact. Use this parameter to model parasitic effects in the transistor.

Dependencies

To enable this parameter, set Modeling option to Threshold-based or Threshold-based with thermal.

Drain lead resistance — Drain lead resistance of transistor

0 Ohm (default) | nonnegative scalar

Since R2024b

Drain lead resistance of the transistor, that is, the series lead resistance associated with the drain contact. Use this parameter to model parasitic effects in the transistor.

Dependencies

To enable this parameter, set Modeling option to Threshold-based or Threshold-based with thermal.

Gate lead resistance — Gate lead resistance of transistor

0 Ohm (default) | nonnegative scalar

Since R2024b

Gate lead resistance of the transistor, that is, the series lead resistance associated with the gate contact. Use this parameter to model parasitic effects in the transistor.

Dependencies

To enable this parameter, set Modeling option to Threshold-based or Threshold-based with thermal.

Body lead resistance — Body lead resistance of transistor

0 Ohm (default) | nonnegative scalar

Since R2024b

Body lead resistance of the transistor, that is, the series lead resistance associated with the body contact. Use this parameter to model parasitic effects in the transistor.

Dependencies

To enable this parameter, set:

• Number of terminals to Four.

• Modeling option to Threshold-based or Threshold-based with thermal.

Source lead inductance — Source lead inductance of transistor

0 nH (default) | nonnegative scalar

Since R2024b

Source lead inductance of the transistor, that is, the series lead inductance associated with the source contact. Use this parameter to model parasitic effects in the transistor.

Dependencies

To enable this parameter, set Modeling option to Threshold-based or Threshold-based with thermal.

Drain lead inductance — Drain lead inductance of transistor

0 nH (default) | nonnegative scalar

Since R2024b

Drain lead inductance of the transistor, that is, the series lead inductance associated with the drain contact. Use this parameter to model parasitic effects in the transistor.

Dependencies

To enable this parameter, set Modeling option to Threshold-based or Threshold-based with thermal.

Gate lead inductance — Gate lead inductance of transistor

0 nH (default) | nonnegative scalar

Since R2024b

Gate lead inductance of the transistor, that is, the series lead inductance associated with the gate contact. Use this parameter to model parasitic effects in the transistor.

Dependencies

To enable this parameter, set Modeling option to Threshold-based or Threshold-based with thermal.

Body lead inductance — Body lead inductance of transistor

0 nH (default) | nonnegative scalar

Since R2024b

Body lead inductance of the transistor, that is, the series lead inductance associated with the body contact. Use this parameter to model parasitic effects in the transistor.

Dependencies

To enable this parameter, set:

• Number of terminals to Four.

• Modeling option to Threshold-based or Threshold-based with thermal.

Capacitance

To enable this setting, set Modeling option to Threshold-based or Threshold-based with thermal.

Parameterization — Capacitance parameterization

Specify fixed input, reverse transfer, and output capacitance (default) | Specify fixed gate-source, gate-drain, and drain-source capacitance | Specify tabulated input, reverse transfer, and output capacitance | Specify tabulated gate-source, gate-drain, and drain-source capacitance

Select one of the following methods for capacitance parameterization:

• Specify fixed input, reverse transfer, and output capacitance — Provide fixed parameter values from datasheet and let the block convert the input, output, and reverse transfer capacitance values to capacitance values, as described in Charge Model for Threshold-Based Modeling Option. This is the default method.

• Specify fixed gate-source, gate-drain, and drain-source capacitance — Provide fixed values for capacitance parameters directly.

• Specify tabulated input, reverse transfer, and output capacitance — Provide tabulated capacitance and source-drain voltage values based on datasheet plots. The block converts the input, output, and reverse transfer capacitance values to capacitance values, as described in Charge Model for Threshold-Based Modeling Option.

• Specify tabulated gate-source, gate-drain, and drain-source capacitance — Provide tabulated values for capacitances and source-drain voltage.

Input capacitance, Ciss — Input gate-source capacitance

182 pF (default)

Gate-source capacitance with the drain shorted to the source.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify fixed input, reverse transfer, and output capacitance.

Input capacitance, Ciss(Vsd) — Input gate-source capacitance with tabulated input

[225 210 200 185 175 170] pF (default)

Gate-source capacitance with the drain shorted to the source, tabulated with source-drain voltage.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance.

Reverse transfer capacitance, Crss — Reverse transfer capacitance

24 pF (default)

Drain-gate capacitance with the source connected to ground, also known as the Miller capacitance.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify fixed input, reverse transfer, and output capacitance.

Reverse transfer capacitance, Crss(Vsd) — Reverse transfer capacitance with tabulated inputs

[75 60 50 35 25 20] pF (default)

Drain-gate capacitance with the source connected to ground, also known as the Miller capacitance, tabulated with source-drain voltage.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance.

Output capacitance, Coss — Output capacitance

0 pF (default)

Drain-source capacitance with the gate and source shorted.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify fixed input, reverse transfer, and output capacitance.

Output capacitance, Coss(Vsd) — Output capacitance with tabulated inputs

[180 160 125 80 60 45] pF (default)

Drain-source capacitance with the gate and source shorted, tabulated with source-drain voltage.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance.

Gate-source capacitance, Cgs — Gate-source capacitance

158 pF (default)

Capacitance placed between the gate and the source.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify fixed gate-source, gate-drain, and drain-source capacitance.

Gate-source capacitance, Cgs(Vsg, Vsd) — Gate-source capacitance with tabulated values

[150 150 150 150 150 150] pF (default)

Capacitance placed between the gate and the source, tabulated with source-gate voltage and source-drain voltage.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

Gate-drain capacitance, Cgd — Gate-drain capacitance

24 pF (default)

Capacitance placed between the gate and the drain.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify fixed gate-source, gate-drain, and drain-source capacitance.

Gate-drain capacitance, Cgd(Vsg,Vsd) — Gate-drain capacitance with tabulated values

[75 60 50 35 25 20] pF (default)

Capacitance placed between the gate and the drain, tabulated with source-gate voltage and source-drain voltage.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

Gate-bulk capacitance, Cgb — Gate-bulk capacitance

0 pF (default)

Capacitance placed between the gate and the bulk.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify fixed gate-source, gate-drain, and drain-source capacitance and Gate-bulk and gate-source charge-voltage linearity to Separate gate-bulk and gate-source capacitance.

Gate-bulk capacitance, Cgb(Vsg,Vsd) — Gate-bulk capacitance with tabulated values

[450 400 300 190 95 55] pF (default)

Capacitance placed between the gate and the bulk, tabulated with source-gate voltage and source-drain voltage.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance and Gate-bulk and gate-source charge-voltage linearity to Separate gate-bulk and gate-source capacitance.

Corresponding source-gate voltages, Vsg — Corresponding source-gate voltages

0 V (default)

Source-gate voltages corresponding to the tabulated capacitance values.

If this value is a scalar, then Gate-source capacitance, Cgs(Vsg,Vsd) and Gate-drain capacitance, Cgd(Vsg,Vsd) are vectors of scalars. If this value is a vector, then Gate-source capacitance, Cgs(Vsg,Vsd) and Gate-drain capacitance, Cgd(Vsg,Vsd) are matrices of scalars.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

Drain-source capacitance, Cds — Drain-source capacitance

0 pF (default)

Capacitance placed between the drain and the source.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify fixed gate-source, gate-drain, and drain-source capacitance.

Drain-source capacitance, Cds(vsd) — Drain-source capacitance with tabulated values

[105 100 75 45 35 25] pF (default)

Capacitance placed between the drain and the source, tabulated with the source-drain voltage.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

Corresponding source-drain voltages, Vsd — Corresponding source-drain voltages

[0.1 0.3 1 3 10 30] V (default)

Source-drain voltages corresponding to the tabulated capacitance values.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance or to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

Source-gate voltage, Vsg, for tabulated capacitances — Source-gate voltage, Vsg, for tabulated capacitances

0 V (default)

For tabulated capacitance models, this parameter controls the voltage dependence of the Reverse transfer capacitance, Crss or the Gate-drain capacitance, Cgd parameter (depending on the selected parameterization option). These capacitances are a function of the drain-gate voltage. The block calculates drain-gate voltages by subtracting this gate-source voltage value from the negative of the values specified for the Corresponding source-drain voltages parameter (Vdg = –Vsd – Vgs).

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance.

Gate-drain charge-voltage linearity — Gate-drain charge-voltage linearity

Gate-drain capacitance is constant (default) | Gate-drain charge function is nonlinear

The two fixed capacitance options let you model gate capacitance as a fixed gate-source capacitance C_GS and either a fixed or a nonlinear gate-drain capacitance C_GD. Select whether the gate-drain capacitance is fixed or nonlinear:

• Gate-drain capacitance is constant — The capacitance value is constant and defined according to the selected parameterization option, either directly or derived from a datasheet. This is the default method.

• Gate-drain charge function is nonlinear — The gate-drain charge relationship is defined according to the piecewise-nonlinear function described in Charge Model for Threshold-Based Modeling Option. Two additional parameters appear to let you define the gate-drain charge function.

Dependencies

To enable this parameter, in the Capacitance setting, set Parameterization to Specify fixed input, reverse transfer and output capacitance or to Specify fixed gate-source, gate-drain and drain-source capacitance.

Gate-drain oxide capacitance — Gate-drain oxide capacitance

200 pF (default)

The gate-drain capacitance when the drain-gate voltage is less than the Drain-gate voltage at which oxide capacitance becomes active parameter value.

Dependencies

To enable this parameter, set Gate-drain charge-voltage linearity to Gate-drain charge function is nonlinear.

Drain-gate voltage at which oxide capacitance becomes active — Drain-gate voltage at which oxide capacitance becomes active

0.5 V (default)

The drain-gate voltage at which the drain-gate capacitance switches between off-state (C_GD) and on-state (C_ox) capacitance values.

Dependencies

To enable this parameter, set Gate-drain charge-voltage linearity to Gate-drain charge function is nonlinear.

Gate-bulk and gate-source charge-voltage linearity — Gate-bulk and gate-source charge-voltage linearity

Gate-bulk and gate-source capacitance change instantly (default) | Gate-bulk and gate-source capacitance change gradually | Separate gate-bulk and gate-source capacitance

Gate-bulk and gate-source charge-voltage linearity.

Dependencies

To enable this parameter, in the Main setting, set Number of terminals to Four.

To enable the Separate gate-bulk and gate-source capacitance option, in the Capacitance setting, set Parameterization to Specify fixed gate-source, gate-drain, and drain-source capacitance or Specify tabulated gate-source, gate-drain, and drain-source capacitance

Channel Capacitances

To enable this setting, set Modeling option to Surface-potential-based or Surface-potential-based with thermal.

Oxide capacitance — Oxide capacitance

1500 pF (default)

The parallel plate gate-channel capacitance.

Gate-source overlap capacitance — Gate-source overlap capacitance

100 pF (default)

The fixed, linear capacitance associated with the overlap of the gate electrode with the source well.

Gate-drain overlap capacitance — Gate-drain overlap capacitance

14 pF (default)

The fixed, linear capacitance associated with the overlap of the gate electrode with the drain well.

Body Diode

Model body diode — Body diode modeling option

No (default) | Exponential | Tabulated I-V curve

Whether to model the body diode.

Table type — Tabulated function

Table in If(Tj,Vf) form (default) | Table in Vf(Tj,If) form

Whether to tabulate the current as a function of temperature and voltage or the voltage as a function of temperature and current.

Dependencies

To enable this parameter, set Model body diode to Tabulated I-V curve.

Reverse saturation current, Is — Reverse saturation current

0 A (default)

The current designated by the I_s symbol in the body-diode equations. The default value for threshold-based modeling option is 0 A. The default value for surface-potential-based modeling option is 5.2e-13 A.

To enable conduction through the body diode, for applications where the MOSFET current changes sign during the simulation, such as when the MOSFET is driving an inductive load, set this parameter to a non-zero value.

For applications where the MOSFET current never changes sign, such as in a small-signal amplifier, set this parameter to 0 to improve simulation speed.

Dependencies

To enable this parameter, set Model body diode to Exponential.

Built-in voltage, Vbi — Built-in voltage

0.6 V (default)

The built-in voltage of the diode, designated by the V_bi symbol in the body-diode equations. Built-in voltage has an impact only on the junction capacitance equation. It does not affect the conduction current.

Dependencies

To enable this parameter, set Model body diode to Exponential.

Ideality factor, n — Ideality factor

1 (default)

The factor designated by the n symbol in the body-diode equations.

Dependencies

To enable this parameter, set Model body diode to Exponential.

Zero-bias junction capacitance, Cj0 — Zero-bias junction capacitance

0 pF (default)

The capacitance between the drain and bulk contacts at zero-bias due to the body diode alone. It is designated by the C_j0 symbol in the body-diode equations. The default value for threshold-based modeling option is 0 pF. The default value for surface-potential-based modeling option is 480 pF.

Dependencies

To enable this parameter, set Model body diode to Exponential.

Transit time, TT — Transit time

50e-9 s (default)

The time designated by the τ symbol in the body-diode equations.

When the Reverse saturation current and Transit time parameters are both non-zero, this block includes the reverse recovery inside the body diode model.

Dependencies

To enable this parameter, set Model body diode to Exponential.

Measurement temperature — Measurement temperature

25 °C (default)

Temperature at which the block parameters are measured.

Dependencies

To enable this parameter, set Model body diode to Exponential and, in the Main setting, set Parameterization to either Lookup table (2-D, temperature independent) or Lookup table (3-D, temperature dependent)

Diode forward voltages, Vf(If) — Diode forward voltages

[.9, 1.15, 1.25, 1.5, 1.75, 2.17, 2.6, 2.85] V (default)

Tabulated values of the minimum voltage that needs to be applied for the diode to become forward-biased.

Dependencies

To enable this parameter,

• In the Main setting, set Parameterization to Specify from a datasheet, Specify from equation parameters directly, or Lookup table (2-D, temperature independent).

• In the Body diode setting, set:

  • Model body diode to Tabulated I-V curve.

    Table type to Table in Vf(If) form.

Diode forward currents, If — Diode forward currents temperature independent

[.1, .2, .5, 1, 2, 4, 7, 10] A (default)

Tabulated values of the forward currents.

Dependencies

To enable this parameter, in the Body diode setting, set Model body diode to Tabulated I-V curve and Table type to Table in Vf(If) form or Table in Vf(Tj,If) form.

Diode forward currents, If(Vf) — Diode forward currents tabulated with forward voltages

[.07, .12, .19, 1.75, 4.24, 7.32, 11.2] A (default)

Tabulated values of the forward current, as a function of the forward voltages.

Dependencies

To enable this parameter,

• In the Main setting, set Parameterization to Specify from a datasheet, Specify from equation parameters directly, or Lookup table (2-D, temperature independent).

• In the Body diode setting, set:

  • Model body diode to Tabulated I-V curve.

    Table type to Table in If(Vf) form.

Diode forward voltages, Vf — Diode forward voltages temperature independent

[.5, .7, .9, 1.3, 1.7, 2.1, 2.5] V (default)

Tabulated values of the forward voltages.

Dependencies

To enable this parameter, in the Body diode setting, set Model body diode to Tabulated I-V curve and Table type to Table in If(Vf) form or Table in If(Tj,Vf) form.

Diode junction temperatures, Tj — Diode junction temperatures

[25, 125] degC (default)

Vector of junction temperatures.

Dependencies

To enable this parameter, set Model body diode to Tabulated I-V curve and, in the Main setting, set Parameterization to Lookup table (3-D, temperature dependent).

Diode forward currents, If(Tj,Vf) — Diode forward currents temperature dependent

[.07, .12, .19, 1.75, 4.24, 7.32, 11.2; .16, .3, .72, 2.14, 4.02, 6.35, 9.12] A (default)

Tabulated values of the forward current, as a function of the forward voltages and junction temperatures.

Dependencies

To enable this parameter,

• In the Main setting, set Parameterization to Lookup table (3-D, temperature dependent).

• In the Body diode setting, set:

  • Model body diode to Tabulated I-V curve.

    Table type to Table in If(Tj,Vf) form.

Diode forward voltages, If(Tj,Vf) — Diode forward voltages temperature dependent

[.9, 1.15, 1.25, 1.5, 1.75, 2.17, 2.6, 2.85; .58, .68, .75, 1.1, 1.38, 1.77, 2.27, 2.7] V (default)

Tabulated values of the forward voltage, as a function of the forward currents and junction temperatures.

Dependencies

To enable this parameter,

• In the Main setting, set Parameterization to Lookup table (3-D, temperature dependent).

• In the Body diode setting, set:

  • Model body diode to Tabulated I-V curve.

    Table type to Table in Vf(Tj,If) form.

Diode off conductance — Conductance of diode when reverse biased

1e-12 1/Ohm (default) | positive scalar

Since R2024a

Conductance of the diode when it is reverse biased.

Dependencies

To enable this parameter, set Model body diode to Tabulated I-V curve.

Temperature Dependence (Threshold-Based Modeling Option)

This configuration of the Temperature Dependence setting corresponds to the threshold-based block modeling option, which is the default. If you are using the surface-potential-based modeling option of the block, see Temperature Dependence (Surface-Potential-Based Modeling Option)

Parameterization — Temperature dependence parameterization

None — Simulate at parameter measurement temperature (default) | Model temperature dependence

Select one of the following methods for temperature dependence parameterization:

• None — Simulate at parameter measurement temperature — Temperature dependence is not modeled. This is the default method.

• Model temperature dependence — Model temperature-dependent effects. Provide a value for simulation temperature, T_s, a value for BEX, and a value for the measurement temperature T_m1 (using the Measurement temperature parameter on the Main setting). You also have to provide a value for α using one of two methods, depending on the value of the Parameterization parameter on the Main setting. If you parameterize the block from a datasheet, you have to provide R_DS(on) at a second measurement temperature, and the block will calculate α based on that. If you parameterize by specifying equation parameters, you have to provide the value for α directly.

Drain-source on resistance, R_DS(on), at second measurement temperature — Drain-source on resistance, R_DS(on), at second measurement temperature

0.25 Ohm (default)

The ratio of the drain-source voltage to the drain current for specified values of drain current and gate-source voltage at second measurement temperature. It must be quoted for the same working point (drain current and gate-source voltage) as the Drain-source on resistance, R_DS(on) parameter on the Main setting.

Dependencies

This parameter is visible only when you select Specify from a datasheet for the Parameterization parameter on the Main setting.

Second measurement temperature — Second measurement temperature

125 degC (default)

Second temperature T_m2 at which Drain-source on resistance, R_DS(on), at second measurement temperature is measured.

Dependencies

This parameter is visible only when you select Specify from a datasheet for the Parameterization parameter on the Main setting.

Gate threshold voltage temperature coefficient, dVth/dT — Gate threshold voltage temperature coefficient, dVth/dT

2 mV/K (default)

The rate of change of gate threshold voltage with temperature.

Dependencies

This parameter is visible only when you select Specify using equation parameters directly for the Parameterization parameter on the Main setting.

Mobility temperature exponent, BEX — Mobility temperature exponent

-1.5 (default)

Mobility temperature coefficient value. You can use the default value for most MOSFETs. See the Assumptions and Limitations section for additional considerations.

Body diode reverse saturation current temperature exponent — Body diode reverse saturation current temperature exponent

3 (default)

The reverse saturation current for the body diode is assumed to be proportional to the square of the intrinsic carrier concentration, n_i = N_C exp(–E_G/2k_BT). N_C is the temperature-dependent effective density of states and E_G is the temperature-dependent bandgap for the semiconductor material. To avoid introducing another temperature-scaling parameter, the block neglects the temperature dependence of the bandgap and uses the bandgap of silicon at 300K (1.12eV) for all device types. Therefore, the temperature-scaled reverse saturation current is given by

$$I_s=I_{s,m1}{\left(\frac{T_s}{T_{m1}}\right)}^{{\eta }_{Is}}\cdot \exp \left(\frac{E_G}{k_B}\cdot \left(\frac{1}{T_{m1}}-\frac{1}{T_s}\right)\right).$$

I_s,m1 is the value of the Reverse saturation current parameter from the Body Diode setting, k_B is Boltzmann’s constant (8.617x10^-5eV/K), and η_Is is the Body diode reverse saturation current temperature exponent. The default value is 3, because N_C for silicon is roughly proportional to T^3/2. You can remedy the effect of neglecting the temperature-dependence of the bandgap by a pragmatic choice of η_Is.

Device simulation temperature — Device simulation temperature

25 degC (default)

Temperature T_s at which the device is simulated.

Temperature Dependence (Surface-Potential-Based Modeling Option)

This configuration of the Temperature Dependence setting corresponds to the surface-potential-based block modeling option. If you are using the threshold-based modeling option of the block, see Temperature Dependence (Threshold-Based Modeling Option)

Parameterization — Temperature dependence parameterization

None — Simulate at parameter measurement temperature (default) | Model temperature dependence

Select one of the following methods for temperature dependence parameterization:

• None — Simulate at parameter measurement temperature — Temperature dependence is not modeled. This is the default method.

• Model temperature dependence — Model temperature-dependent effects. Provide a value for the device simulation temperature, T_s, and the temperature-scaling coefficients for other block parameters.

Gain temperature exponent — Gain temperature exponent

1.3 (default)

The MOSFET gain, β, is assumed to scale exponentially with temperature, β = β_m1 (T_m1/T_s)^η_β. β_m1 is the value of the Gain parameter from the Main setting and η_β is the Gain temperature exponent.

Dependencies

This parameter is visible only when you select Model temperature dependence for the Parameterization parameter.

Flatband voltage temperature coefficient — Flatband voltage temperature coefficient

5e-4 V/K (default)

The flatband voltage, V_FB, is assumed to scale linearly with temperature, V_FB = V_FBm1 + (T_s – T_m1)S_T,VFB. V_FBm1 is the value of the Flatband voltage parameter from the Main setting and S_T,VFB is the Flatband voltage temperature coefficient.

Dependencies

This parameter is visible only when you select Model temperature dependence for the Parameterization parameter.

Surface potential at strong inversion temperature coefficient — Surface potential at strong inversion temperature coefficient

-8.5e-4 V/K (default)

The surface potential at strong inversion, 2ϕ_B, is assumed to scale linearly with temperature, 2ϕ_B = 2ϕ_Bm1 + (T_s – T_m1)S_T,ϕB. 2ϕ_Bm1 is the value of the Surface potential at strong inversion parameter from the Main setting and S_T,ϕB is the Surface potential at strong inversion temperature coefficient.

Dependencies

This parameter is visible only when you select Model temperature dependence for the Parameterization parameter.

Velocity saturation temperature exponent — Velocity saturation temperature exponent

1.04 (default)

The velocity saturation, θ_sat, is assumed to scale exponentially with temperature, θ_sat = θ_sat,m1 (T_m1/T_s)^η_θ. θ_sat,m1 is the value of the Velocity saturation factor parameter from the Main setting and η_θ is the Velocity saturation temperature exponent.

Dependencies

This parameter is visible only when you select Model temperature dependence for the Parameterization parameter.

Surface roughness scattering temperature exponent — Surface roughness scattering temperature exponent

0.65 (default)

This parameter leads to a temperature-dependent reduction in the MOSFET transconductance at high gate voltage. The surface roughness scattering, θ_sr, is assumed to scale exponentially with temperature, θ_sr = θ_sr,m1 (T_m1/T_s)^η_sr. θ_sr,m1 is the value of the Surface roughness scattering factor parameter from the Main setting and η_sr is the Surface roughness scattering temperature exponent.

Dependencies

This parameter is visible only when you select Model temperature dependence for the Parameterization parameter.

Resistance temperature exponent — Resistance temperature exponent

0.95 (default)

The series resistances are assumed to correspond to semiconductor resistances. Therefore, they decrease exponentially with increasing temperature. R_i = R_i,m1 (T_m1/T_s)^η_R, where i is S, D, or G, for the source, drain, or gate series resistance, respectively. R_i,m1 is the value of the corresponding series resistance parameter from the Ohmic Resistance setting and η_R is the Resistance temperature exponent.

Dependencies

This parameter is visible only when you select Model temperature dependence for the Parameterization parameter.

Body diode reverse saturation current temperature exponent — Body diode reverse saturation current temperature exponent

3 (default)

The reverse saturation current for the body diode is assumed to be proportional to the square of the intrinsic carrier concentration, n_i = N_C exp(–E_G/2k_BT). N_C is the temperature-dependent effective density of states and E_G is the temperature-dependent bandgap for the semiconductor material. To avoid introducing another temperature-scaling parameter, the block neglects the temperature dependence of the bandgap and uses the bandgap of silicon at 300K (1.12eV) for all device types. Therefore, the temperature-scaled reverse saturation current is given by

$$I_s=I_{s,m1}{\left(\frac{T_s}{T_{m1}}\right)}^{{\eta }_{Is}}\cdot \exp \left(\frac{E_G}{k_B}\cdot \left(\frac{1}{T_{m1}}-\frac{1}{T_s}\right)\right).$$

I_s,m1 is the value of the Reverse saturation current parameter from the Body Diode setting, k_B is Boltzmann’s constant (8.617x10^-5eV/K), and η_Is is the Body diode reverse saturation current temperature exponent. The default value is 3, because N_C for silicon is roughly proportional to T^3/2. You can remedy the effect of neglecting the temperature-dependence of the bandgap by a pragmatic choice of η_Is.

Dependencies

This parameter is visible only when you select Model temperature dependence for the Parameterization parameter.

Device simulation temperature — Device simulation temperature

25 degC (default)

Temperature T_s at which the device is simulated.

Dependencies

This parameter is visible only when you select Model temperature dependence for the Parameterization parameter.

Faults

The fault interface includes the Fault Inspector window and the Faults section of the Blocks tab for blocks that support faults. You define what triggers the fault and how the fault behaves when that trigger occurs. When you create and edit the fault, you parameterize the fault behavior.

To add a fault, click the Add fault hyperlink.

After you create the fault, you can change the properties in the Fault Inspector window. When you open a block that has a fault, the Open Fault Inspector hyperlink appears instead of the Add fault hyperlink. For an example that shows how to include faults, see Analyze a DC Armature Winding Fault.

PMOS fault — Option to add fault

Add fault (default)

Option to add a fault in the P-Channel MOSFET block.

Trigger fault at time — Time before entering faulted state

0 s (default) | nonnegative scalar

Simulation time at which the block enters the faulted state.

Dependencies

To enable this parameter, in the Fault Inspector window, set Trigger Type to Timed.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Maximum permissible source-gate voltage — Source-gate voltage threshold to fault transition

inf V (default) | positive scalar

Maximum permissible source-gate voltage value, above which a fault might be triggered.

Dependencies

To enable this parameter, in the Fault Inspector window, set Trigger Type to Behavioral.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Maximum permissible source-drain voltage — Source-drain voltage threshold to fault transition

inf V (default) | positive scalar

Maximum permissible source-drain voltage value, above which a fault might be triggered.

Dependencies

To enable this parameter, in the Fault Inspector window, set Trigger Type to Behavioral.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Maximum permissible bulk-drain voltage — Bulk-drain voltage threshold to fault transition

inf V (default) | positive scalar

Maximum permissible bulk-drain voltage value, above which a fault might be triggered.

Dependencies

To enable this parameter:

• In the Fault Inspector window, set Trigger Type to Behavioral.

• In the Main setting, set Number of terminals to Four.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Maximum permissible source-drain current — Current threshold to fault transition

inf A (default) | positive scalar

Maximum permissible source-drain current value. If the current exceeds this value for longer than the value of the Time to fail when exceeding drain-source current parameter, then the block enters the faulted state.

Dependencies

To enable this parameter, in the Fault Inspector window, set Trigger Type to Behavioral.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Time to fail when exceeding source-drain current — Time to fail when exceeding source-drain current

1 s (default) | positive scalar

Amount of time that the source-drain current must continuously exceed the maximum permissible drain-source current before a behavioral fault is triggered.

Dependencies

To enable this parameter, in the Fault Inspector window, set Trigger Type to Behavioral.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Maximum permissible body diode current — Body diode current threshold to fault transition

inf A (default) | positive scalar

Maximum permissible body diode current value. If the current exceeds this value for longer than the value of the Time to fail when exceeding body diode current parameter, then the block enters the faulted state.

Dependencies

To enable this parameter:

• Set Model body diode to either Exponential or Tabulated I-V curve.

• In the Fault Inspector window, set Trigger Type to Behavioral.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Time to fail when exceeding body diode current — Time to fail when exceeding body diode current

1 s (default) | positive scalar

Amount of time that the body diode current must continuously exceed the maximum permissible body diode current before a behavioral fault is triggered.

Dependencies

To enable this parameter:

• Set Model body diode to either Exponential or Tabulated I-V curve.

• In the Fault Inspector window, set Trigger Type to Behavioral.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Maximum diode recovery, dV/dt — Maximum diode recovery

inf V/s (default) | positive scalar

Maximum amount of diode recovery per second.

Dependencies

To enable this parameter:

• Set Model body diode to either Exponential or Tabulated I-V curve.

• In the Fault Inspector window, set Trigger Type to Behavioral.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Maximum permissible temperature — Temperature threshold to fault transition

inf K (default) | positive scalar

Maximum permissible temperature value. If the temperature exceeds this value for longer than the value of the Time to fail when exceeding temperature parameter, then the block enters the faulted state.

Dependencies

To enable this parameter:

• Set Modeling option to Threshold-based with thermal.

• In the Fault Inspector window, set Trigger Type to Behavioral.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Time to fail when exceeding temperature — Time to fail when exceeding temperature

1 s (default) | positive scalar

Amount of time that the temperature must continuously exceed the maximum permissible temperature before a behavioral fault is triggered.

Dependencies

To enable this parameter:

• Set Modeling option to Threshold-based with thermal.

• In the Fault Inspector window, set Trigger Type to Behavioral.

This parameter appears in the Trigger section of the Fault Inspector window. For more information, see Set Fault Triggers.

Fault transition time constant, tau — Fault transition time constant

1e-3 s (default)

Time constant for transitioning to faulted state.

Dependencies

To enable this parameter, add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

Failure mode — Failure category

Open circuit (default) | Drain-source short | Drain-bulk short or source-bulk short | Gate oxide short | Parameter shift

Type of failure. You can set this parameter to:

• Open circuit — Failure due to metallization burnout.

• Drain-source short — Failure due to avalanche breakout on drain-source channel.

• Drain-bulk short or source-bulk short — Failure due to avalanche breakout on drain-bulk or source-bulk channels.

• Gate oxide short — Failure of the gate oxide dielectric layer.

• Parameter shift — Failure due to aging.

Dependencies

To enable this parameter, add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

To enable the Drain-source short option, in the Main setting, set Number of terminals to Three.

To enable the Drain-bulk short or source-bulk short option, in the Main setting, set Number of terminals to Four.

Faulted series gate resistance, Rg — Faulted series gate resistance

1e6 Ohm (default)

Series gate resistance in faulted state.

Dependencies

To enable this parameter, add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter and set Failure mode to Open circuit.

Faulted series drain resistance, Rd — Faulted series drain resistance

1000 Ohm (default)

Series drain resistance in faulted state.

Dependencies

To enable this parameter, add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter and set Failure mode to Open circuit.

Faulted series source resistance, Rs — Faulted series source resistance

1000 Ohm (default)

Series source resistance in faulted state.

Dependencies

To enable this parameter, add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter and set Failure mode to Open circuit.

Faulted series bulk resistance, Rb — Faulted series source resistance

1000 Ohm (default)

Series source resistance in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Open circuit.

Faulted parallel drain-source conductance, Gds — Faulted parallel drain-source conductance

1000 1/Ohm (default)

Parallel drain-source conductance in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Three.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Drain-source short.

Faulted parallel drain-bulk conductance, Gdb — Faulted parallel drain-bulk conductance

1000 1/Ohm (default)

Parallel drain-bulk conductance in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Drain-bulk short or source-bulk short.

Faulted parallel source-bulk conductance, Gsb — Faulted parallel source-bulk conductance

1000 1/Ohm (default)

Parallel source-bulk conductance in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Drain-bulk short or source-bulk short.

Location of fault node (percentage of total channel length from source) — Fault node location

0 (default)

Location of the fault node, as a percentage of the total channel length from the source.

Dependencies

To enable this parameter, add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter and set Failure mode to Gate oxide short.

Gate oxide short conductance, G — Gate oxide short conductance

1000 1/Ohm (default)

Gate oxide short conductance.

Dependencies

To enable this parameter, add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter and set Failure mode to Gate oxide short.

Model gate oxide short diode — Model option for gate oxide short diode

No (default) | Yes

Whether to model the gate oxide short diode.

Dependencies

To enable this parameter, add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter and set Failure mode to Gate oxide short.

Gate oxide short diode reverse saturation current, Is — Reverse saturation current of gate oxide short diode

0 A (default)

Reverse saturation current of the gate oxide short diode.

Dependencies

To enable this parameter:

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Gate oxide short.

• Set Model gate oxide short diode to Yes.

Gate oxide short diode built-in voltage, Vbi — Built-in voltage of gate oxide short diode

0.6 V (default)

Built-in voltage of the gate oxide short diode.

Dependencies

To enable this parameter:

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Gate oxide short.

• Set Model gate oxide short diode to Yes.

Gate oxide short diode ideality factor, n — Ideality factor of gate oxide short diode

1 (default)

Ideality factor of the gate oxide short diode.

Dependencies

To enable this parameter:

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Gate oxide short.

• Set Model gate oxide short diode to Yes.

Gate oxide short diode zero-bias junction capacitance, Cj0 — Zero-bias junction capacitance of gate oxide short diode

0 pF (default)

Zero-bias junction capacitance of the gate oxide short diode.

Dependencies

To enable this parameter:

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Gate oxide short.

• Set Model gate oxide short diode to Yes.

Gate oxide short diode transit time, TT — Transit time of gate oxide short diode

50e-9 s (default)

Transit time of the gate oxide short diode.

Dependencies

To enable this parameter:

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Gate oxide short.

• Set Model gate oxide short diode to Yes.

Shifted gain as percentage of unshifted — Shifted gain as percentage of unshifted

100 (default)

Shifted gain as percentage of unshifted.

Dependencies

To enable this parameter:

• In the Main setting, set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Threshold voltage shift value, dVth — Threshold voltage shift value

0 V (default)

Shift value of threshold voltage.

Dependencies

To enable this parameter:

• In the Main setting, set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted channel modulation, L — Faulted channel modulation

0 1/V (default)

Channel modulation in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Shifted body factor as percentage of unshifted — Shifted body factor as percentage of unshifted

100 (default)

Shifted body factor as percentage of unshifted.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• In the Main setting, set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Surface potential shift value, dPhib — Surface potential shift value

0 V (default)

Shift value of surface potential.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• In the Main setting, set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted source ohmic resistance, Rs — Faulted source ohmic resistance

0.0001 Ohm (default)

Transistor source resistance in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted drain ohmic resistance, Rd — Faulted drain ohmic resistance

0.01 Ohm (default)

Transistor drain resistance in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted body ohmic resistance, Rb — Faulted body ohmic resistance

0.001 Ohm (default)

Transistor body resistance in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• In the Main setting, set Parameterization to Specify from a datasheet or Specify using equation parameters directly.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted vector of source-gate voltages, Vsg — Faulted vector of source-gate voltages

[-.5, 2, 3, 4, 5] V (default)

Source-gate voltages in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Parameterization to Lookup table (2-D, temperature independent) or Lookup table (3-D, temperature dependent).

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted vector of source-drain voltages, Vsd — Faulted vector of source-drain voltages

[0, 2, 4, 8, 12, 16, 20] V (default)

Source-drain voltages in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Parameterization to Lookup table (2-D, temperature independent) or Lookup table (3-D, temperature dependent).

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted vector of source-bulk voltages, Vsb — Faulted vector of source-bulk voltages

[0, -4, -6, -12] V (default)

Source-bulk voltages in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• In the Main setting, set Parameterization to Lookup table (2-D, temperature independent) or Lookup table (3-D, temperature dependent).

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted tabulated gate-source threshold voltage, Vth(Vsb) — Faulted tabulated gate-source threshold voltage

[.4, 1.2, 1.4, 1.45] V (default)

Tabulated gate-source threshold voltage in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• In the Main setting, set Parameterization to Lookup table (2-D, temperature independent).

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted tabulated gate-source threshold voltage, Vth(Vsb,T) — Faulted tabulated gate-source threshold voltage dependent on temperature

[.4, .35; 1.2, 1.15; 1.4, 1.35; 1.45, 1.4] V (default)

Gate-source threshold voltage in faulted state, tabulated on bulk-source voltage and temperature.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• In the Main setting, set Parameterization to Lookup table (3-D, temperature dependent).

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted tabulated source-drain currents, Isd(Vsg,Vsd) — Faulted tabulated source-drain currents

[0, 0, 0, 0, 0, 0, 0; 0, .003, .0038, .0043, .0046, .0048, .0049; 0, .0055, .008, .009, .0095, .01, .0101; 0, .0115, .016, .018, .019, .0195, .02; 0, .0152, .0225, .0265, .028, .0295, .03] A (default)

Tabulated source-drain currents in faulted state.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Three.

• In the Main setting, set Parameterization to Lookup table (2-D, temperature independent).

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted tabulated source-drain currents, Isd(Vsg,Vsd,T) — Faulted tabulated source-drain currents dependent on temperature

zeros(5, 7, 2) A (default)

Source-drain currents in faulted state, tabulated on source-gate voltage, source-drain voltage, and temperature.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Three.

• In the Main setting, set Parameterization to Lookup table (3-D, temperature dependent).

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted tabulated source-drain currents at zero source-bulk voltage, Isd(Vsg,Vsd) — Faulted tabulated source-drain currents at zero source-bulk voltage

[0, 0, 0, 0, 0, 0, 0; 0, .003, .0038, .0043, .0046, .0048, .0049; 0, .0055, .008, .009, .0095, .01, .0101; 0, .0115, .016, .018, .019, .0195, .02; 0, .0152, .0225, .0265, .028, .0295, .03] A (default)

Tabulated source-drain currents in faulted state, when the source-bulk voltage is zero.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• In the Main setting, set Parameterization to Lookup table (2-D, temperature independent).

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted tabulated source-drain currents at zero source-bulk voltage, Isd(Vsg,Vsd,T) — Faulted tabulated source-drain currents at zero source-bulk voltage, dependent on temperature

zeros(5, 7, 2) A (default)

Tabulated source-drain currents in faulted state, when the source-bulk voltage is zero, tabulated on source-gate voltage, source-drain voltage, and temperature.

Dependencies

To enable this parameter:

• In the Main setting, set Number of terminals to Four.

• In the Main setting, set Parameterization to Lookup table (3-D, temperature dependent).

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted gate-source capacitance as percentage of unfaulted — Faulted gate-source capacitance as percentage of unfaulted

100 (default)

Gate-source capacitance in faulted state as percentage of unfaulted.

Dependencies

To enable this parameter, meet one of these sets of conditions:

Condition Set One

• In the Capacitance setting, set Parameterization to Specify fixed input, reverse transfer, and output capacitance or Specify fixed gate-source, gate-drain, and drain-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

Condition Set Two

• In the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance or Specify tabulated gate-source, gate-drain, and drain-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Open circuit, Drain-source short, Drain-bulk short or source-bulk short, or Gate oxide short.

Faulted gate-drain capacitance as percentage of unfaulted — Faulted gate-drain capacitance as percentage of unfaulted

100 (default)

Gate-drain capacitance in faulted state as percentage of unfaulted.

Dependencies

To enable this parameter, meet one of these sets of conditions:

Condition Set One

• In the Capacitance setting, set Parameterization to Specify fixed input, reverse transfer, and output capacitance or Specify fixed gate-source, gate-drain, and drain-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

Condition Set Two

• In the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance or Specify tabulated gate-source, gate-drain, and drain-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Open circuit, Drain-source short, Drain-bulk short or source-bulk short, or Gate oxide short.

Faulted gate-bulk capacitance as percentage of unfaulted — Faulted gate-bulk capacitance as percentage of unfaulted

100 (default)

Gate-bulk capacitance in faulted state as percentage of unfaulted.

Dependencies

To enable this parameter, meet one of these sets of conditions:

Condition Set One

• In the Main setting, Number of terminals to Four.

• In the Capacitance setting, set:

  • Parameterization to Specify fixed gate-source, gate-drain, and drain-source capacitance.

  • Gate-bulk and gate-source charge-voltage linearity to Separate gate-bulk and gate-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

Condition Set Two

• In the Main setting, Number of terminals to Four.

• In the Capacitance setting, set:

  • Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

  • Gate-bulk and gate-source charge-voltage linearity to Separate gate-bulk and gate-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Open circuit, Drain-bulk short or source-bulk short, or Gate oxide short.

Faulted drain-source capacitance as percentage of unfaulted — Faulted drain-source capacitance as percentage of unfaulted

100 (default)

Drain-source capacitance in faulted state as percentage of unfaulted.

Dependencies

To enable this parameter, meet one of these sets of conditions:

Condition Set One

• In the Capacitance setting, set Parameterization to Specify fixed input, reverse transfer, and output capacitance or Specify fixed gate-source, gate-drain, and drain-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

Condition Set Two

• In the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance or Specify tabulated gate-source, gate-drain, and drain-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Open circuit, Drain-source short, Drain-bulk short or source-bulk short, or Gate oxide short.

Faulted gate-drain oxide capacitance as percentage of unfaulted — Faulted gate-drain oxide capacitance as percentage of unfaulted

100 (default)

Gate-drain oxide capacitance in faulted state as percentage of unfaulted.

Dependencies

To enable this parameter,

• In the Capacitance setting, set:

  • Parameterization to Specify fixed input, reverse transfer, and output capacitance or Specify fixed gate-source, gate-drain, and drain-source capacitance.

  • Gate-drain charge-voltage linearity to Gate-drain charge function is non linear.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted drain-gate voltage at which oxide capacitance becomes active — Faulted drain-gate voltage at which oxide capacitance becomes active

-0.5 V (default)

Drain-gate voltage in faulted state at which oxide capacitance becomes active.

Dependencies

To enable this parameter,

• In the Capacitance setting, set:

  • Parameterization to Specify fixed input, reverse transfer, and output capacitance or Specify fixed gate-source, gate-drain, and drain-source capacitance.

  • Gate-drain charge-voltage linearity to Gate-drain charge function is non linear.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted input capacitance, Ciss(Vds) — Faulted input capacitance

[720, 700, 590, 470, 390, 310] pF (default)

Input capacitance in faulted state.

Dependencies

To enable this parameter,

• In the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted reverse transfer capacitance, Crss(Vds) — Faulted reverse transfer capacitance

[450, 400, 300, 190, 95, 55] pF (default)

Reverse transfer capacitance in faulted state.

Dependencies

To enable this parameter,

• In the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted output capacitance, Coss(Vds) — Faulted output capacitance

[900, 810, 690, 420, 270, 170] pF (default)

Output capacitance in faulted state.

Dependencies

To enable this parameter,

• In the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted corresponding source-drain voltages, Vsd — Faulted corresponding source-drain voltages

[.1, .3, 1, 3, 10, 30] V (default)

Corresponding drain-source voltages in faulted state.

Dependencies

To enable this parameter,

• In the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance or Specify tabulated gate-source, gate-drain, and drain-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted source-gate voltages, Vsg, for tabulated capacitances — Faulted source-gate voltages for tabulated capacitances

0 V (default)

Source-gate voltages for tabulated capacitances, in faulted state.

Dependencies

To enable this parameter, meet one of these sets of conditions:

Condition Set One

• In the Capacitance setting, set Parameterization to Specify tabulated input, reverse transfer, and output capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Condition Set Two

• In the Main setting, Number of terminals to Four.

• In the Capacitance setting, set:

  • Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

  • Gate-bulk and gate-source charge-voltage linearity to Gate-bulk and gate-source capacitance change instantly or Gate-bulk and gate-source capacitance change gradually.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted gate-source capacitance, Cgs(Vgs,Vds) — Faulted gate-source capacitance

[270, 300, 290, 280, 295, 255] pF (default)

Gate-source capacitance in faulted state, tabulated with gate-source voltage and drain-source voltage.

Dependencies

To enable this parameter,

• In the Capacitance setting, set Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted gate-drain capacitance, Cgd(Vgs,Vds) — Faulted gate-source capacitance

[450, 400, 300, 190, 95, 55] pF (default)

Gate-drain capacitance in faulted state, tabulated with gate-source voltage and drain-source voltage.

Dependencies

To enable this parameter,

• In the Capacitance setting, set Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted gate-bulk capacitance, Cgb(Vgs,Vds) — Faulted gate-source capacitance

[270, 300, 290, 280, 295, 255] pF (default)

Gate-bulk capacitance in faulted state, tabulated with gate-source voltage and drain-source voltage.

Dependencies

To enable this parameter,

• In the Main setting, set Number of terminals to Four.

• In the Capacitance setting, set:

  • Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

  • Gate-bulk and gate-source charge-voltage linearity to Separate gate-bulk and gate-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted corresponding source-gate voltages, Vsg — Faulted corresponding source-gate voltages

0 V (default)

Corresponding source-gate voltages in faulted state.

Dependencies

To enable this parameter,

• In the Capacitance setting, set:

  • Parameterization to Specify tabulated gate-source, gate-drain, and drain-source capacitance.

  • Gate-bulk and gate-source charge-voltage linearity to Separate gate-bulk and gate-source capacitance.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode reverse saturation current, Is — Faulted diode reverse saturation current

0 A (default)

Reverse saturation current of the diode in faulted state.

Dependencies

To enable this parameter,

• In the Body Diode setting, set Model body diode to Exponential.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode built-in voltage, Vbi — Faulted diode built-in voltage

0.6 V (default)

Built-in voltage of the diode in faulted state.

Dependencies

To enable this parameter,

• In the Body Diode setting, set Model body diode to Exponential.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode ideality factor, n — Faulted diode ideality factor

1 (default)

Ideality factor of the diode in faulted state.

Dependencies

To enable this parameter,

• In the Body Diode setting, set Model body diode to Exponential.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode zero-bias junction capacitance as percentage of unfaulted — Faulted diode zero-bias junction capacitance as percentage of unfaulted

100 (default)

Faulted diode zero-bias junction capacitance as percentage of unfaulted.

Dependencies

To enable this parameter,

• In the Body Diode setting, set Model body diode to Exponential.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode transit time, TT — Faulted diode transit time

50e-9 s (default)

Transit time of the diode in faulted state.

Dependencies

To enable this parameter,

• In the Body Diode setting, set Model body diode to Exponential.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode forward currents, If(Vf) — Faulted diode forward currents

[.07, .12, .19, 1.75, 4.24, 7.32, 11.2] A (default)

Forward currents of the diode in faulted state, tabulated with the forward voltages.

Dependencies

To enable this parameter,

• In the Main setting, set Parameterization to Specify from a datasheet, Specify using equation parameters directly, or Lookup table (2-D, temperature independent).

• In the Body Diode setting, set:

  • Model body diode to Tabulated I-V curve.

  • Table type to Table in If(Vf) form.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode forward voltages, Vf — Faulted diode forward voltages

[.5, .7, .9, 1.3, 1.7, 2.1, 2.5] V (default)

Forward voltages of the diode in faulted state.

Dependencies

To enable this parameter,

• In the Body Diode setting, set:

  • Model body diode to Tabulated I-V curve.

  • Table type to Table in If(Vf) form or Table in If(Tj,Vf) form

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode forward voltages, Vf(If) — Faulted diode forward voltages

[.9, 1.15, 1.25, 1.5, 1.75, 2.17, 2.6, 2.85] V (default)

Forward voltages of the diode in faulted state, tabulated with the forward currents.

Dependencies

To enable this parameter,

• In the Main setting, set Parameterization to Specify from a datasheet, Specify using equation parameters directly, or Lookup table (2-D, temperature independent).

• In the Body Diode setting, set:

  • Model body diode to Tabulated I-V curve.

  • Table type to Table in Vf(If) form.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode forward currents, If — Faulted diode forward currents

[.1, .2, .5, 1, 2, 4, 7, 10] A (default)

Forward currents of the diode in faulted state.

Dependencies

To enable this parameter,

• In the Body Diode setting, set:

  • Model body diode to Tabulated I-V curve.

  • Table type to Table in Vf(If) form and Table in Vf(Tj,If) form.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode forward currents, If(Tj,Vf) — Faulted diode forward currents with tabulated inputs

[.07, .12, .19, 1.75, 4.24, 7.32, 11.2; .16, .3, .72, 2.14, 4.02, 6.35, 9.12] A (default)

Forward currents of the diode in faulted state, tabulated with the forward voltages and junction temperatures.

Dependencies

To enable this parameter,

• In the Main setting, set Parameterization to Lookup table (3-D, temperature dependent).

• In the Body Diode setting, set:

  • Model body diode to Tabulated I-V curve.

  • Table type to Table in If(Tj,Vf) form.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode forward voltages, Vf(Tj,If) — Faulted diode forward voltages with tabulated inputs

[.9, 1.15, 1.25, 1.5, 1.75, 2.17, 2.6, 2.85; .58, .68, .75, 1.1, 1.38, 1.77, 2.27, 2.7] V (default)

Forward voltages of the diode in faulted state, tabulated with the forward currents and junction temperatures.

Dependencies

To enable this parameter,

• In the Main setting, set Parameterization to Lookup table (3-D, temperature dependent).

• In the Body Diode setting, set:

  • Model body diode to Tabulated I-V curve.

  • Table type to Table in Vf(Tj,If) form.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the PMOS fault parameter.

• Set Failure mode to Parameter shift.

Faulted diode off conductance — Faulted diode off conductance

1e-12 1/Ohm (default)

Since R2024a

Off conductance of the diode in faulted state.

Dependencies

To enable this parameter,

• In the Body Diode setting, set Model body diode to Tabulated I-V curve.

• Add a fault to the P-Channel MOSFET block by clicking the Add fault hyperlink in the NMOS fault parameter.

• Set Failure mode to Parameter shift.

References

[1] Shichman, H. and D. A. Hodges. “Modeling and simulation of insulated-gate field-effect transistor switching circuits.” IEEE J. Solid State Circuits. SC-3, 1968.

[2] Van Langevelde, R., A. J. Scholten, and D. B. M. Klaassen. "Physical Background of MOS Model 11. Level 1101." Nat.Lab. Unclassified Report 2003/00239. April 2003.

[3] Oh, S-Y., D. E. Ward, and R. W. Dutton. “Transient analysis of MOS transistors.” IEEE J. Solid State Circuits. SC-15, pp. 636-643, 1980.

Extended Capabilities

C/C++ Code Generation
Generate C and C++ code using Simulink® Coder™.

Version History

Introduced in R2008a

R2024b: Model the parasitic lead resistances and inductances in each transistor terminal

You can now model parasitic effects in each terminal of the P-Channel MOSFET block by specifying lead resistances and inductances using these parameters:

• Source lead resistance

• Drain lead resistance

• Gate lead resistance

• Body lead resistance

• Source lead inductance

• Drain lead inductance

• Gate lead inductance

• Body lead inductance

R2024a: Specify the off conductance value of the tabulated diode

You can now specify the value of the off conductance of the tabulated diode by using the Diode off conductance parameter.

Before R2024a, to specify the off conductance of the tabulated diode, you must connect an Environment Parameters block to the electrical network. Then, set the minimum conductance of the P-Channel MOSFET block and other SPICE-compatible blocks by setting the GMIN parameter of the Environment Parameters block.